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| 2N3501CSM4 MECHANICAL DATA Dimensions in mm (inches) HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 5.59 0.13 (0.22 0.005) 0.25 0.03 (0.01 0.001) 1.40 0.15 (0.055 0.006) * SILICON PLANAR EPITAXIAL NPN TRANSISTOR * HERMETIC CERAMIC SURFACE MOUNT PACKAGE * CECC SCREENING OPTIONS 0.23 min. (0.009) 0.64 0.08 (0.025 0.003) 0.23 rad. (0.009) 3 2 1.27 0.05 (0.05 0.002) 3.81 0.13 (0.15 0.005) 4 1 * SPACE QUALITY LEVELS OPTIONS * HIGH VOLTAGE 1.02 0.20 (0.04 0.008) 2.03 0.20 (0.08 0.008) APPLICATIONS: LCC3 PACKAGE Underside View PAD 1 - Collector PAD 2 - N/C PAD 3 - Emitter PAD 4 - Base Hermetically sealed surface mount version of the popular 2N3501 for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD Tstg Rja Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IB = 0) Collector Current Total Device Dissipation TA = 25 C Derate above 25C Storage Temperature Thermal Resistance Junction to Ambient 150V 150V 6V 300mA 500mW 2.85mW / C -65 to 200C 350C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 12/98 2N3501CSM4 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter Test Conditions OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage1 Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 10mA IC = 10A IE= 10A VCB = 75V VCB = 75V VEB(off) = 4V IC = 0.1mA IC = 1mA hFE DC Current Gain IC = 10mA IC = 150mA IC = 300mA IC = 10mA VCE(SAT) Collector-Emitter Saturation Voltage1 IC = 50mA IC = 150mA IC = 10mA VBE(SAT) Base-Emitter Saturation Voltage1 IC = 50mA IC = 150mA IB = 0 IE = 0 IC = 0 IE = 0 IE = 0 TA = 150C IC = 0 VCE = 10V VCE = 10V VCE = VCE = VCE = 10V1 10V1 10V1 Min. 150 150 6 Typ. Max. Unit V 0.05 50 A nA ON CHARACTERISTICS 35 50 75 100 20 0.2 0.25 0.4 0.8 0.9 1.2 V V 300 -- IB = 1mA IB = 5mA IB = 15mA IB = 1mA IB = 5mA IB = 15mA IC = 20mA f = 100MHZ IE = 0 f = 1MHZ IC = 0 f = 1MHZ IC = 10mA f = 1KHZ IC = 10mA f = 1KHZ IC = 10mA f = 1KHZ IC = 10mA f = 1KHZ SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo hie hre hfe hoe Current-Gain-Bandwidth Product2 Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance VCE = 20V VCB = 10V VEB = 0.5V VCE = 10V VCE = 10V VCE = 10V VCE = 10V 150 8 pF MHZ 80 0.25 1.25 4 375 200 x10-4 -- Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 12/98 2N3501CSM4 ELECTRICAL CHARACTERISTICS Continued (TA = 25C unless otherwise stated) Parameter SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time IC = 150mA VCC = 100V IC = 150mA VCC = 100V IC = 150mA IC = 150mA IB1 = 15mA VEB(off) = -2V IB1 = 15mA VEB(off) = -2V VCC = 100V VCC = 100V 20 35 800 80 ns Test Conditions Min. Typ. Max. Unit IB1 = IB2 = 15mA IB1 = IB2 = 15mA 1) Pulse test : Pulse Width < 300s ,Duty Cycle < 2% 2) ft is defined as the frequency at which |hfe|.ftest Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 12/98 |
Price & Availability of 2N3501CSM4
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